Monolithically Cointegrated Tensile Strained Germanium and In_xGa_1-xAs FinFETs for Tunable CMOS Logic

In this article, we have evaluated the merits of monolithically cointegrated alternate channel complementary metal-oxide-semiconductor (CMOS) device architecture, utilizing tensile strained germanium ( $\boldsymbol {\varepsilon }$ -Ge) for p-channel FinFET and variable indium (In) compositional x Ga xmlns:xlink="http://www.w3.org/1999/xlink">1-x As notation="LaTeX">$0.10\le {x} \le0.53$ ) n- FinFET. The simulation models were calibrated using experimental results Ge InGaAs FinFETs subsequently transferred to structure while keeping parameters fixed. parameters, such as notation="LaTeX">${V}_{\text {T}}$ , notation="LaTeX">${I}_{\text {on}}$ {off}}$ subthreshold-swing (SS), determined identical fin dimensions a function composition that alters strain in Ge. These are controllable during heteroepitaxial growth by varying As. -Ge p-FinFET is shown be superior terms SS {on}}/{I}_{\text ratio compared with other competing architectures. architecture CMOS inverter exhibited an optimum performance over range compositions from 20% 40% driving fan-out 1 (FO-1) FO-4 load configurations. addition, symmetric rise fall times well noise-immune functionality demonstrated 150 GHz operating frequency 30-nW total power dissipation at composition, hence power-delay-product comparable International Technology Roadmap Semiconductors (ITRS) standards. Moreover, three-stage ring oscillator was various stable efficient. Thus, approach has potential to: 1) simplify large-scale integration 2) compatible optoelectronic materials.